Method of producing articles by chemical vapor deposition and th

Details Method of producing articles by chemical vapor deposition and th Method of producing articles by chemical vapor deposition and th

1993-09-09

1999-02-09

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

216100, 216 10, 428408, C23C 1626, C23F 126, B32B 900

Patent

active

058691332

ABSTRACT:
An improved method of producing a diamond tube by chemical vapor deposition and a hollow support mandrel used therein. The method comprises depositing a diamond film on an outer side of the hollow mandrel by the CVD process. The mandrel is then etched away by subjecting an inner side of the mandrel to the etching action. It was unexpectedly discovered that the etch time is drastically reduced by using the hollow mandrels.

REFERENCES:
patent: 242900 (1881-06-01), Edison
patent: 3139363 (1964-06-01), Baldrey
patent: 3429962 (1969-02-01), Krystyniak
patent: 3863333 (1975-02-01), Loya
patent: 3892827 (1975-07-01), Keller et al.
patent: 3998653 (1976-12-01), Anthony et al.
patent: 4062714 (1977-12-01), Griesshammer et al.
patent: 4066485 (1978-01-01), Rosnowski et al.
patent: 4080246 (1978-03-01), Battisti et al.
patent: 4318770 (1982-03-01), Chakupurakal
patent: 4816200 (1989-03-01), Stecher et al.
patent: 4925701 (1990-05-01), Jansen et al.
patent: 4954216 (1990-09-01), Hunter et al.
patent: 5023068 (1991-06-01), Jones
patent: 5114745 (1992-05-01), Jones
Harris et al., Journal of Applied Physics, vol. 66, No. 11, Dec. 1, 1989, pp. 5353-5359.

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