Method of producing an ultra thin electrically conducting...

Details Method of producing an ultra thin electrically conducting... Method of producing an ultra thin electrically conducting...

2003-09-10

2008-12-23

Rose, Keisha L (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

07468557

ABSTRACT:
An ultra thin film with very low electrical resistance is produced by forming a substrate of a substrate material which forms a metastable bond and depositing a conducting film on the substrate in a vacuum environment in which a base pressure is reduced to a value below 10−5Torr. The film is a metal, metallic alloy, or multilayered film which includes at least one metallic layer. A 0.1 nm thick manganese film deposited in this way on a germanium substrate has a resistivity which at room temperature is lower than the resistivity of metal films of aluminum and copper with the same thickness prepared the same way.

REFERENCES:
patent: 5584941 (1996-12-01), Nishida
patent: 6172296 (2001-01-01), Iwasaki et al.
patent: 6507187 (2003-01-01), Olivas et al.
patent: 2003/0000930 (2003-01-01), Hamada

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