Method of producing an oxide superconductor single crystal film

Details Method of producing an oxide superconductor single crystal film Method of producing an oxide superconductor single crystal film

1994-09-12

1996-04-30

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Coating

505473, 505234, 505239, 505729, 427 62, 427596, 117108, 117904, H01L 3924, C30B 2300

Patent

active

055125417

ABSTRACT:
The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.

REFERENCES:
patent: 5106823 (1992-04-01), Creuzet et al.
patent: 5240904 (1993-08-01), Tanaka et al.
Lowndes et al, "In-Situ Growth of High Quality Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films at Moderate Temperatures by Pulsed Laser Ablation", MRS (Boston, MA) Nov. 27-Dec. 1989, pp. 1-4.
"Introduction of high temperature superconductor", published by Ohm corporation, Japan, Feb. 1989, pp. 75-99.
Shimazawa et al., Japanese Journal of Applied Physics, vol. 27, No. 6, Jun., 1988, pp. L1071-L1073.

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