Method of producing an ohmic contact and a semiconductor device

Details Method of producing an ohmic contact and a semiconductor device Method of producing an ohmic contact and a semiconductor device

1998-09-11

2000-03-28

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257763, 257298, 438931, 438602, H01L 310312, H01L 2974

Patent

active

060435135

ABSTRACT:
In a method of producing an ohmic contact (5) to a p-type .alpha.-SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said .alpha.-SiC layer (3b), and said deposited layers (5) are annealed to convert at least part of said deposited layers (5) to aluminium-titanium-silicide.

REFERENCES:
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5124779 (1992-06-01), Furukawa et al.
patent: 5319220 (1994-06-01), Suzuki et al.
patent: 5539217 (1996-07-01), Edmond et al.
patent: 5561829 (1996-10-01), Sawtell et al.
H. Daimon et al., "Annealing Effects on Al and Al-Si Contacts with 3C-SiC,"Japanese Journal of Applied Physics, vol. 25, No.7 pp. L592-L594 (Jul. 1986).
G. Gao et al., "High Frequency Performance of SiC Heterojunction Bipolar Transistors,"IEEE Transactions on Electron Devices, vol. 41, No. 7, pp. 1092-1097 (Jul. 1994).

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