Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2008-05-06
2008-05-06
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S485000, C438S499000, C438S914000, C257SE21042, C257SE21107
Reexamination Certificate
active
07368317
ABSTRACT:
The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the donor species, at a temperature that is less than or equal to the dissociation temperature of the complexes formed between the acceptor and the donor species.
REFERENCES:
patent: 5653800 (1997-08-01), Kucherov et al.
patent: 5891241 (1999-04-01), Yoshida
patent: 6340393 (2002-01-01), Yoshida
patent: 0543392 (1993-05-01), None
patent: 0646968 (1995-04-01), None
patent: 1036863 (2000-09-01), None
patent: 06151331 (1994-05-01), None
patent: 9-20593 (1997-01-01), None
patent: 10247624 (1998-09-01), None
patent: 10287966 (1998-10-01), None
patent: 200026194 (2000-01-01), None
Preliminary Search Report for FA 630598/FR 0215453, Oct. 23, 2003.
International Search Report for PCT/FR 03/03592, Apr. 12, 2003.
Ballutad, D. et al., “Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films”, Diamond and Related Materials, 9(2000), p. 1171-74.
Chevallier, J. et al., “Hydrogen-boron interactions in p-type diamond”, Physical Review B., vol. 58, No. 12, pp. 7966-7969.
Chevallier, J., et al., “Hydrogen in Monocrystalline CVD Boron Doped Diamond”, Phys. Stat. Sol., 174, 73, 1999, pp. 73-81.
Chevallier, J., et al., “Hydrogen in n-type diamond”, Diamond and Related Materials, 11(2002), pp. 1566-1571.
Chevallier, J., et al., “Hydrogen-acceptor interactions in diamond”, Diamond and Related Materials, 10(2001), pp. 399-404.
Koizumi, S., et al., “Phosphorus-doped chemical vapor deposition of diamond”, Diamond and Related Materials, 9(2000), pp. 935-940.
Landstrass and Ravi, “Resistivity of chemical vapor deposited diamond films” Applied Physics Letters, Sep. 1989, pp. 975-976.
Popovici, G., et al., “Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamond”, Journal of Applied Physics, May 15, 1995, pp. 5103-5106.
Popovici, G., et. al., “Diffusion of Impurities Under Bias in CVD Diamond Films”, Mat. Res. Soc. Symp. Proc., vol. 339, 1994, pp. 601-606.
Saguy, C., et al., “n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers”, Diamond and Related Materials, 13(2004), pp. 700-704.
Teukam, Z., et al., “Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers”, nature materials, vol. 2, Jul. 2003, pp. 482-486.
Teukam, Z., et. al., “Trap limited diffusion of hydrogen in boron-doped diamond”, 12(2003), pp. 647-451.
Uzan-Saguy, C., et. al., “Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptors”, Diamond and Related Materials, 10(2001), pp. 453-458.
Ballutaud Dominique
Marie Chevallier Jacques Paul
Teukam Zephirin Symplice
Centre National de la Recherche Scientifique--CNRS
Marshall & Gerstein & Borun LLP
Sarkar Asok Kumar
Universite de Versailles St-Quentin En Yvelines
LandOfFree
Method of producing an N-type diamond with high electrical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing an N-type diamond with high electrical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing an N-type diamond with high electrical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2774498