Method of producing an ion implanted tuning diode

Details Method of producing an ion implanted tuning diode Method of producing an ion implanted tuning diode

1976-12-28

1978-08-15

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 14, 357 91, H01L 21265, H01L 2993

Patent

active

041069536

ABSTRACT:
Semiconductor devices with special reference to the process for fabricating tuning diodes. This invention includes the super-position of a multiplicity of ion implants and thermal redistribution cycles for the purpose of establishing a particular distribution of dopant atoms in the electrically active portion of the device.

REFERENCES:
patent: 3523838 (1970-08-01), Heidenreich
patent: 3634738 (1972-01-01), Leith et al.
patent: 3638300 (1972-02-01), Foxhall et al.
P. Brook et al., "Hyperabrupt Junctions . . . Diodes by Ion Implantation," Electronics Lett., vol. 4, (1968) 335.
R. A. Moline et al., "Ion-Implanted Hyperabrupt Junction Voltage Variable Capacitors" Proc. IEEE Trans. on Electron Devices, ED-19, 2/1972, 267.
W. H. Schroen, "The Impact of Process Control . . . ", Semiconductor Silicon, 1973 (ed. Huff et al.), Princeton, N. J., 738.
J. Sansbury, "Appl. Ion-Implantation in Semiconductor-Processing", Solid State Tech., 11/1976, 32.

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