Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-01-18
1983-12-20
Saba, W. G.
Metal working
Method of mechanical manufacture
Assembling or joining
29577C, 29578, 29580, 148175, 148187, 156647, 156648, 156653, 156657, 357 50, 357 54, 357 55, 357 92, H01L 2120, H01L 21302
Patent
active
044208740
ABSTRACT:
An I.sup.2 L type semiconductor device having an elementary region which is isolated by V-shape grooves from the other portions of the device, said semiconductor device comprising an insulating layer coating covering the surface of the semiconductor body of the device, wherein an injector region is formed under said insulating layer and surrounded by thicker portions of said insulating layer, and base regions are formed under said insulating layer between said thicker portions of said insulating layer and said V-shape grooves.
REFERENCES:
patent: 3878552 (1975-04-01), Rodgers
patent: 3904450 (1975-09-01), Evans et al.
patent: 4231057 (1980-10-01), Momma et al.
patent: 4233091 (1980-11-01), Kawabe
patent: 4255207 (1981-03-01), Nicolay et al.
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4317127 (1982-02-01), Nishizawa
patent: 4320411 (1982-03-01), Fukushima
Wiedmann, S. K., "Injection-Coupled Memory: High-Density . . . Memory", IEEE J. Solid-State Circuits, vol. SC-8, No. 5, (Oct. 1973), pp. 332-337.
Declerq et al., "N-Groove-Isolated IIL Circuits", Electronics Letters, Mar. 18, 1976, vol. 12, No. 6, pp. 150-151.
Fujitsu Limited
Saba W. G.
LandOfFree
Method of producing an IIL semiconductor device utilizing self-a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing an IIL semiconductor device utilizing self-a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing an IIL semiconductor device utilizing self-a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-101476