Method of producing an electro-optical device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

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438158, 438609, H01L 2184

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active

057260770

ABSTRACT:
A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.

REFERENCES:
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patent: 5210045 (1993-05-01), Possin et al.
patent: 5346833 (1994-09-01), Wu
patent: 5466618 (1995-11-01), Kim
patent: 5496752 (1996-03-01), Nasu et al.
patent: 5585290 (1996-12-01), Yamamoto et al.

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