Method of producing an electrical resistor by implanting a semic

Fishing – trapping – and vermin destroying

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437918, H01L 21265

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active

048513598

ABSTRACT:
The invention enables precise and reliable adjustment of the resistance of a resistor formed in a zone (16) of monocrystalline semiconductor material (11) in spite of the presence of a density gradient of electrically active ions at the periphery of the zone, as a result of the implantation of ions of rare gases (+) in the zone. Furthermore, when the standard method of producing a resistor in a polycrystalline semiconductor material is used, implanting rare gas ions in the resistive zone enables precise and reliable adjustment of the resistance. The invention also maintains the dimensions of the initially resistive zone, despite later annealing, and is suitable for large-scale integration of circuits.

REFERENCES:
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patent: 3925106 (1975-12-01), Ku et al.
patent: 4035925 (1977-10-01), Burr et al.
patent: 4110776 (1978-08-01), Rao et al.
patent: 4432008 (1984-02-01), Maltiel
IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3460-3461, Abbas et al.
Solid-State Electronics, vol. 19, No. 12, Dec. 1976, pp. 1021-1027, Wright, Kenneth et al.
Electronics, vol. 53, No. 1, Jun. 1980, pp. 39-40, Allan, Roger.

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