Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2004-08-06
2008-11-04
Zimmerman, John J (Department: 1794)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C029S025410, C029S896600, C361S509000, C428S613000
Reexamination Certificate
active
07445646
ABSTRACT:
A micro-denier fiber of less than approximately 2.0 microns is coated in a valve metal to a metal thickness of approximately 0.2 to 2.0 microns. In one embodiment, a long filament of coated fiber is wound on a spool in such a way that the maximum arrangement of fiber density is achieved For example, the spool may have a cross section exhibiting a hexagonal close-packed arrangement of the fibers. In another embodiment, a plurality of fibers may be grown or formed into a particular arrangement prior to coating. Once coated and arranged, the fiber mass is compressed and constrained so that shapes can be cut out in various thicknesses, such as, for example, approximately 50 microns to 5000 microns. Each sheet is sintered to bind the metal and remove the fiber, leaving a porous anode that can be oxidized and formed in the usual manner for a capacitor.
REFERENCES:
patent: 2266349 (1941-12-01), Bernhard
patent: 2417460 (1947-03-01), Eitel et al.
patent: 2499977 (1950-03-01), Scott
patent: 2619438 (1952-11-01), Varian et al.
patent: 2752731 (1956-07-01), Altosaar
patent: 2900579 (1959-08-01), Rogers
patent: 3087233 (1963-04-01), Turnbull
patent: 3243642 (1966-03-01), Gebel
patent: 3502502 (1970-03-01), Elsby
patent: 3742369 (1973-06-01), Douglass
patent: 3751271 (1973-08-01), Kimura et al.
patent: 3887365 (1975-06-01), Sherfey
patent: 4166564 (1979-09-01), Wolber
patent: 4427506 (1984-01-01), Nguyen et al.
patent: 4474657 (1984-10-01), Arora
patent: 4518471 (1985-05-01), Arora
patent: 4525249 (1985-06-01), Arora
patent: 5034857 (1991-07-01), Wong
patent: 5131388 (1992-07-01), Pless et al.
patent: 5245514 (1993-09-01), Fife et al.
patent: 5564067 (1996-10-01), Hendricks
patent: 5715133 (1998-02-01), Harrington et al.
patent: 5869196 (1999-02-01), Wong et al.
patent: 58-164705 (1983-09-01), None
patent: 2002-339288 (2002-11-01), None
patent: 2003-147571 (2003-05-01), None
Hemphill R. Jason
Jiang Xiaofei
Strange Thomas F.
Mitchell Steven M.
Pacesetter Inc.
Zimmerman John J
LandOfFree
Method of producing an anode for an electrolytic capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing an anode for an electrolytic capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing an anode for an electrolytic capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4032253