Method of producing alloyed metal contact layers on crystal-orie

Details Method of producing alloyed metal contact layers on crystal-orie Method of producing alloyed metal contact layers on crystal-orie

1981-08-04

1982-11-16

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

219121L, 219121LM, 357 15, 357 65, 427 88, 427 91, H01L 2124

Patent

active

043594867

ABSTRACT:
A region of a semiconductor surface intended for a metal contact is scanned with a closely packed sequence of intense laser light pulses so as to generate a disturbed surface layer and a metal layer is then applied and alloyed into the semiconductor surface. The invention is particularly useful with silicon crystal surfaces orientated in the <100> direction, which for the manufacture of semiconductor components, such as thyristors having controllable short-circuits generated by integrated field effect transistors, are provided on their back side with an aluminum contact or a metal silicide contact.

REFERENCES:
patent: 4261764 (1981-04-01), Narayan

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