Method of producing active matrix substrate

Details Method of producing active matrix substrate Method of producing active matrix substrate

2007-07-25

2010-12-21

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S737000, C438S706000, C257SE21215

Reexamination Certificate

active

07855152

ABSTRACT:
The invention provides a production method for an active matrix substrate in which a plurality of contact holes are formed by a one-mask process so as to reach metal films which are present at different depth positions in an insulating layer and are not evaporated by dry etching using a fluorine-containing gas. The method includes a step of performing dry etching using mixed gas of CHF3, CF4and O2to form the plurality of contact hole, a step of subjecting the plurality of contact holes to oxygen ashing, and a step of forming a transparent conductive film in the plurality of contact holes.

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“Dictionary of Physics” 2004, Macmillan Publishers, p. 819.

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