Method of producing a walled emitter semiconductor device

Details Method of producing a walled emitter semiconductor device Method of producing a walled emitter semiconductor device

1982-07-07

1984-08-14

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 29576E, 29578, H01L 21265

Patent

active

044655282

ABSTRACT:
A method of producing a bipolar type semiconductor device including the steps of: forming an insulating layer, consisting of an oxide film of the semiconductor substrate or a separate layer on a silicon semiconductor substrate or layer having a first conductivity type; forming a polycrystalline semiconductor layer on the insulating layer; forming a mask layer on the polycrystalline semiconductor layer; forming a first base region on the semiconductor substrate or layer by introducing an impurity of a second conductivity type, through the polycrystalline semiconductor layer; removing the polycrystalline semiconductor layer under the mask layer; forming an aperture on the insulating layer with the remaining polycrystalline semiconductor layer, or its oxide film, used as a mask; a second base region, which is placed in contact with the first base region, by introducing a second conductivity type impurity into the semiconductor substrate or layer through the aperture; and forming a first conductivity type emitter region within the second base region through the aperture.

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