Method of producing a two-dimensional electron gas semiconductor

Details Method of producing a two-dimensional electron gas semiconductor Method of producing a two-dimensional electron gas semiconductor

1988-01-21

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 45, 437203, 437184, 437107, 437133, 437 49, 437 50, 437234, 148DIG131, 148DIG168, H01L 21203, H01L 21302

Patent

active

048493686

ABSTRACT:
Disclosed is a method of producing a compound semiconductor device comprising an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.

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