Method of producing a through-hole, silicon substrate having a t

Details Method of producing a through-hole, silicon substrate having a t Method of producing a through-hole, silicon substrate having a t

1997-11-12

2000-11-07

Gulakowski, Randy

Etching a substrate: processes

Forming or treating thermal ink jet article

216 2, 216 56, 205157, 205171, B44C 122, H01L 21306

Patent

active

061431907

ABSTRACT:
The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

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Bassous, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon," IEEE Transaction on Electron Devices, vol. ED-25, No. 10 (1978), pp. 1178-1185.
Binning et al., "Surface Studies by Scanning Tunneling Microscopy," Physical Review Letters, vol. 49, No. 1 (1982), pp. 57-60.
Imai, "A New Dielectric Isolation Method Using Porous Silicon," Solid-State Electronics, vol. 24 (1981), pp. 159-164.
Takai and Itoh, "Porous silicon layers and its oxide for the silicon-on-insulator structure," J. Appl. Phys., vol. 60, No. 1 (1986), pp. 222-225.

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