Method of producing a thin layer of semiconductor material

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Reexamination Certificate

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C438S977000

Reexamination Certificate

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07067396

ABSTRACT:
The invention relates to a method of producing a thin layer of semiconductor material including:a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face,a thermal treatment step in order to achieve coalescence of the microcavitiespossibly, a step of creating at least one electronic component (5) in the thin layer (6),a separation step of separating the thin layer (6) from the rest (7) of the wafer.

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