Method of producing a thin layer of semiconductor material

Details Method of producing a thin layer of semiconductor material Method of producing a thin layer of semiconductor material

1997-05-14

2000-02-01

Picardat, Kevin M.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

438455, 438459, H01L 2130, H01L 2146

Patent

active

060202521

ABSTRACT:
A thin layer of semiconductor material is produced by implanting ions through a flat face of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face. The resulting wafer is then subjected to a thermal treatment step in order to achieve coalescence of the microcavities. During or following the thermal treatment, a thin layer is separated from the rest of the wafer by application of mechanical force.

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"Investigtion of the bubble formation mechnanism in a-Si:H films by Fourier-transform infrared microspectroscopy" Mishima et al Japan Applied Physics; 64(8); Oct. 15, 1988; pp. 3972-3974.

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