Method of producing a thin film resistor

Details Method of producing a thin film resistor Method of producing a thin film resistor

1998-08-28

2000-12-26

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Resistor

438381, 438382, H01L 2120

Patent

active

061658626

ABSTRACT:
After a CrSiN film and a TiW film are formed on a substrate through an intermediate insulating layer, a mask pattern is formed on the TiW film. Then a two-step dry etching treatment is performed to etch the TiW film and the CrSiN film into a specific shape. Specifically, first the TiW film is selectively etched under conditions including a large content of fluorine radicals. Then the CrSiN film is selectively etched under conditions including a large content of oxygen radicals. Accordingly, a thin film resistor can be formed with high accuracy with respect to the mask pattern.

REFERENCES:
patent: 4657628 (1987-04-01), Holloway et al.
patent: 5043295 (1991-08-01), Ruggerio et al.
patent: 5420063 (1995-05-01), Maghsoudnia et al.
patent: 5503878 (1996-04-01), Suzuki et al.
patent: 5989970 (1999-11-01), Ohkawa et al.

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