Method of producing a tantalum thin film capacitor

Details Method of producing a tantalum thin film capacitor Method of producing a tantalum thin film capacitor

1976-03-26

1977-11-15

Stallard, W.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29 2542, 204 37R, 204 38A, 361305, 427 79, 427 80, C23C 1500, H01G 410

Patent

active

040584453

ABSTRACT:
A method of producing thin film tantalum capacitors having a tantalum thin film electrode mounted on a nonconducting support member is described. The tantalum electrode is doped with nitrogen to produce a nitrogen content in a range from the nitrogen content of .beta. tantalum to that for tantalum nitride. A tantalum pentoxide film with dielectric properties is grown on the tantlum electrode by oxidation. At least, the tantalum electrode and the dielectric are subjected to tempering. The dielectric is then covered with another electrode.

REFERENCES:
patent: 3275915 (1966-09-01), Harendza-Harinxma
patent: 3544434 (1970-12-01), Giller et al.
patent: 3607679 (1971-09-01), Melroy et al.
patent: 3664931 (1972-05-01), Gerstenberg
patent: 3718565 (1973-02-01), Pelletier
patent: 3723838 (1973-03-01), Kumagai

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