Method of producing a t-shaped gate electrode

Details Method of producing a t-shaped gate electrode Method of producing a t-shaped gate electrode

1990-10-31

1992-08-18

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437176, 437184, 437912, 148DIG140, H01L 2128

Patent

active

051399687

ABSTRACT:
A semiconductor device includes a relatively broad recess in a semiconductor substrate between a source electrode and a drain electrode, a relatively narrow, deeper recess closer to the source electrode than to the drain electrode, and a T-shaped gate electrode having a broad head disposed in the narrower recess. A production method for a semiconductor device having a T-shaped gate electrode provided with a broad head and disposed in a two stage recess includes producing a relatively broad recess in a semiconductor substrate leaving a dummy gate, producing a resist pattern for producing the head of the T-shaped gate electrode, exposing the dummy gate by removing some of the resist pattern, and thereafter producing a narrower, deeper recess closer to the source electrode than to the drain electrode, thereby producing a two stage recess structure and producing a T-shaped gate electrode in the deeper recess.

REFERENCES:
patent: 4224089 (1980-09-01), Nishimoto et al.
patent: 4616400 (1986-10-01), Macksey et al.
patent: 4733283 (1988-03-01), Kuroda
patent: 4792531 (1988-12-01), Kakihana
patent: 4818724 (1989-04-01), Cetronio et al.
patent: 4865952 (1989-09-01), Yoshioka et al.
patent: 4929567 (1990-05-01), Parks et al.
patent: 4959326 (1990-09-01), Roman et al.
patent: 4975382 (1990-12-01), Takasugi
patent: 4981809 (1991-01-01), Mitsuaki et al.
patent: 4984036 (1991-01-01), Sakamoto et al.
patent: 4997778 (1991-03-01), Sim et al.
Taylor et al, "High-Efficiency 35-GHz GaAs MESFET's", Jun. 1987, pp. 1259-1263.

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