Method of producing a substrate for an amorphous semiconductor

Details Method of producing a substrate for an amorphous semiconductor Method of producing a substrate for an amorphous semiconductor

1994-04-22

1996-10-08

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437233, 20419212, 118723E, 118723MW, H01L 2120

Patent

active

055630928

ABSTRACT:
A substrate for use to form an amorphous semiconductor having excellent characteristics, and an amorphous semiconductor substrate comprising a substrate of this kind are disclosed. A method of producing the amorphous semiconductor substrate is also disclosed. An amorphous semiconductor such as a--Si, a--Si alloys, or the like is deposited on a substrate by utilizing an RF plasma having a frequency greater than 50 MHz in an atmosphere whose partial gas pressure associated with a residual gas other than inert gas and hydrogen is less than 10.sup.-8, while applying a bias voltage including a DC component to the substrate during the deposition process. The present invention is characterized in that the substrate has a surface layer having an amorphous structure wherein electric charges may move at least through said surface layer.

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