Method of producing a strained layer

Details Method of producing a strained layer Method of producing a strained layer

2011-01-04

2011-01-04

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000, C438S457000, C257SE21567

Reexamination Certificate

active

07863156

ABSTRACT:
A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed.

REFERENCES:
patent: 2003/0199105 (2003-10-01), Kub et al.
patent: 2004/0229444 (2004-11-01), Couillard et al.
patent: WO 98/54766 (1998-12-01), None
patent: WO 03/030215 (2003-04-01), None
patent: WO 2006/097522 (2006-09-01), None
“Silicon Wafer Bonding Technology” for VLSI and MEMS Applications, Edited by S.S. Iyer and A. J. Auberton-Hervé, 2002, INSPEC, London, Chapter 1, pp. 1-20.
“Silicon Wafer Bonding Technology” for VLSI and MEMS Applications, Edited by S.S. lyer and A. J. Auberton-Hervé, 2002, INSPEC, London, Chapter 3, pp. 35-52.
K. Sakaguchi, et al.—“ELTRAN® By Splitting Porous Sl Layers”, Proceedings of the 9thInternational Symposium on Silicon-on-Insulator Tech. and Devicem 99-3, The Electrochemical Society, Seattle, p. 117-121 (1999).

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