Method of producing a silicon nitride based sintered body

Details Method of producing a silicon nitride based sintered body Method of producing a silicon nitride based sintered body

1995-05-23

1997-12-16

Czaja, Donald E.

Plastic and nonmetallic article shaping or treating: processes

Direct application of electrical or wave energy to work

Producing or treating inorganic material, not as pigments,...

264434, 264683, C04B 3332, C04B 3334, C04B 3336, C04B 3571

Patent

active

056981562

ABSTRACT:
Provided herein is a me silicon nitride based sintered body composed only of uniform, fine crystal grains, and improved in both strength and fracture toughness in the middle and low temperature ranges. The crystalline silicon nitride powder thus produced is composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as material powder. According to the disclosed method, the silicon nitride powder is sintered at a temperature of 1200.degree. C. to 1400.degree. C. or sintered with a product of sintering temperature (.degree. C.) and sintering time (sec) below 600000 (.degree. C. sec) at a temperature of 1400.degree. C. to 1900.degree. C. By this method, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.

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