Plastic and nonmetallic article shaping or treating: processes – Direct application of electrical or wave energy to work – Producing or treating inorganic material – not as pigments,...
Patent
1995-05-23
1997-12-16
Czaja, Donald E.
Plastic and nonmetallic article shaping or treating: processes
Direct application of electrical or wave energy to work
Producing or treating inorganic material, not as pigments,...
264434, 264683, C04B 3332, C04B 3334, C04B 3336, C04B 3571
Patent
active
056981562
ABSTRACT:
Provided herein is a me silicon nitride based sintered body composed only of uniform, fine crystal grains, and improved in both strength and fracture toughness in the middle and low temperature ranges. The crystalline silicon nitride powder thus produced is composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as material powder. According to the disclosed method, the silicon nitride powder is sintered at a temperature of 1200.degree. C. to 1400.degree. C. or sintered with a product of sintering temperature (.degree. C.) and sintering time (sec) below 600000 (.degree. C. sec) at a temperature of 1400.degree. C. to 1900.degree. C. By this method, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.
REFERENCES:
patent: 4122155 (1978-10-01), Prochazka et al.
patent: 5098449 (1992-03-01), Hwang et al.
patent: 5128081 (1992-07-01), Siegel et al.
patent: 5139720 (1992-08-01), Takeda et al.
patent: 5223186 (1993-06-01), Eastman et al.
patent: 5369065 (1994-11-01), Yoshimura et al.
patent: 5454999 (1995-10-01), Jayashankar et al.
patent: 5538675 (1996-07-01), Dunmead et al.
patent: 5622905 (1997-04-01), Matsuura et al.
Manabu et al., Abstract of JP-4292466, "Silicon Nitride Sintered Compact and Its Production", Oct. 16, 1992.
Tiegs, et al., Ceram. Eng. Sci. Proc., "Microwave Sintering of Silicon Nitride", 1991, pp. 1981-1992.
Pan et al., Advanced Ceramic Material, vol. 3, No. 1, "Plasma Sintering of Ultrafine Amorphous Si.sub.3 N.sub.4 ", 1988, pp. 77-79.
Chen et al., Materials Research Society Symposium Proceedings, vol. 287, "Silicon Nitride Ceramics Scientific and Technological Advances", 1992, pp. 289-294.
Kim et al., Journal of the European Ceramic Society, vol. 5, No. 5, "Sintering of Si.sub.3 N.sub.4 with Y.sub.2 O.sub.3 and Al.sub.2 O.sub.3 Added by Coprecipitation", 1989, pp. 311-319.
Kulig, Journal of the European Ceramic Society 5, "Sol-Gel Coating of Silicon Nitride with Mg-Al Oxide Sintering Aid", 1989, pp. 209-217.
Matsuura Takashi
Miyake Hasaya
Yamakawa Akira
Czaja Donald E.
Ruller Jacqueline A.
Sumitomo Electric Industries Ltd.
LandOfFree
Method of producing a silicon nitride based sintered body does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing a silicon nitride based sintered body, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a silicon nitride based sintered body will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-202668