Method of producing a silicon carbide semiconductor device

Details Method of producing a silicon carbide semiconductor device Method of producing a silicon carbide semiconductor device

1995-08-17

1997-01-28

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 41, 437100, 437190, 437192, 148DIG148, H01L 21265

Patent

active

055977448

ABSTRACT:
Electrodes 16a and 16b composed of metal nitride made of either one of TiN, ZrN, HfN, VN and TaN are formed on an N-type source region 12 and drain region 13 of a P-type SiC substrate 11, respectively, Nitrogen-rich layers 12a and 13a are formed in surface layer portions of the regions 12 and 13 which the electrodes composed of metal nitride 16a and 16b contact respectively. The nitrogen-rich layer allows the contact resistivity of the electrode to be made small, A metal nitride composed of either one of TiN, ZrN, HfN, VN and TaN is interposed between a gate electrode 15 of Mo and an interconnection of Al 17c to prevent the reaction of the gate electrode and the interconnection.

REFERENCES:
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 5196360 (1993-03-01), Doan et al.
patent: 5270534 (1993-12-01), Palmour
patent: 5385855 (1995-01-01), Brown et al.
patent: 5459107 (1995-10-01), Palmour

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