Method of producing a silicide/Si heteroepitaxial structure, and

Details Method of producing a silicide/Si heteroepitaxial structure, and Method of producing a silicide/Si heteroepitaxial structure, and

1986-01-17

1987-11-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG147, 148DIG25, 148DIG72, 156612, 437200, 437248, H01L 21203

Patent

active

047071974

ABSTRACT:
Described is a method for producing metal silicide/silicon heterostructures. The method comprises depositing a very thin Si "template" layer on a relatively cold (<200.degree. C.) silicide substrate, raising the substrate temperature into the approximate range 500.degree.-800.degree. C. and maintaining it there while depositing further Si onto the template. The resulting Si layer can be of high crystalline perfection. The silicide advantageously is CoSi.sub.2, Co.sub.x Ni.sub.1-x Si.sub.2, CoSi.sub.y Ge.sub.2-y, or NiSi.sub.2, with 0<x<1,1<y<2.

REFERENCES:
patent: 4357183 (1982-11-01), Fan et al.
patent: 4477308 (1984-10-01), Gibson et al.
patent: 4492971 (1985-01-01), Bean et al.
patent: 4529455 (1985-07-01), Bean et al.
patent: 4544418 (1985-10-01), Gibbons
patent: 4555301 (1985-11-01), Gibson et al.
patent: 4632712 (1986-12-01), Fan et al.
Saitoh et al, "Double Heteroepitaxy in the Si (III)/CoSi.sub.2 /Si Structure" in Appl. Phys. Lett. 37(2), Jul. 15, 1980, pp. 203-205.
Ishiwara et al. "Epitaxial Growth of Elemental Semiconductor Films onto Silicide/Si and Fluoride/Si Structures" in J. Vac. Sci. Technol. B1(2), Apr.-Jun. 1983, pp. 266-271.
Ishiwara et al., "Epitaxial Growth of Fluoride Films on Silicon Substrates" in Mat. Res. Soc. Symp. Proc., vol. 25 (1984), Elsevier, pp. 393-403.
Bean et al., "Silicon/Metal Silicide Heterostructures Grown by MBE" in Appl. Phys. Lett. 37(7), Oct. 1, 1980, pp. 643-646.
Tung et al., "Epitaxial Silicides" in Thin Solid Films, 93 (1982), pp. 77-90.
Canali et al., "Solid Phase Epitaxial Growth of Si Through Pd.sub.2 Si Layers" in J. Appl. Phys., vol. 46, No. 7, Jul. 1975, pp. 2831-2836.
Campisi et al., "Heteroepitaxial Silicon Growth on Polycryptalline MoSi.sub.2 " in J. Appl. Phys. 52(8), Aug. 1981, pp. 5043-5049.
Journal Applied Physics 55(10), May 15, 1984 "Epitaxial Growth of Si Films on CaF.sub.2 /Si Structures with Thin Si Layers Predeposited at Room Temperature" by T. Asano et al., pp. 3566-3570.
IEEE Transactions on Electron Devices, vol. ED110, "Comparison of Hot Electron and Related Amplifiers" by John L. Moll, pp. 299-304 (1963).
Solid State Electronics, vol. 9, "Appraisal of Semiconductor-Metal-Semiconductor Transistor", by S. M. Sze et al., pp. 751-769 (1966).
IEEE Technical Digest, International Electron Device Meeting, "Fabrication and Microwave Performance of the Permeable Base Transistor", by C. O. Bozler et al, pp. 384-387 (1979).
Electrons and Phonons, The Theory of Transport Phenomena in Solids, by J. M. Ziman, Oxford University Press, p. 259, 1960.
Physical Review Letters, vol. 52, No. 6, "Schottky-Barrier Formation at Single-Crystal Metal Semiconductor Interfaces", by R. T. Tung, pp. 461-464, Feb. 6, 1984.
Proceedings of the 2nd International Symposium on Molecular Beam Epitaxy, "Low-Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE", by A. Ishizaka et al., pp. 183-186, Tokyo, 1982.

Affiliated with

Also associated with

Rating

Method of producing a silicide/Si heteroepitaxial structure, and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a silicide/Si heteroepitaxial structure, and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a silicide/Si heteroepitaxial structure, and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1447793