Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-02-11
1978-02-21
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148187, 148188, 156626, 156654, 427 85, 427 93, 427 95, 427240, 427372A, 427377, H01L 2120, H01L 2131, H01L 21316
Patent
active
040750442
ABSTRACT:
A method of producing a siliceous cover layer on a semiconductor element or wafer so that the temperature coefficient of the cover layer is approximated to the temperature coefficient of the semiconductor wafer, comprises distributing a combined emulsion over the wafer by centrifugal force. The combined emulsion is formed by making a mixture of a first emulsion of a non-doped, pure, silica emulsion and a second emulsion of a heavily-doped silica emulsion and adjusting the ratio of the first and second emulsions so that the temperature coefficient of the formed layer will be substantially identical with the temperature coefficient of the semiconductor element in form of a wafer or die. After the cover layer is hardened, the peripheral bead which forms from the emulsion mixture is etched off so that the exposed semiconductor surface, as well as the front side of the semiconductor die or wafer, are ready for epitaxial coating.
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Jager Hans
Seipp Emil
Rutledge L. Dewayne
S.A. Metallurgie Hoboken-Overpelt N.V.
Saba W. G.
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