Method of producing a semiconductor structure including a Schott

Details Method of producing a semiconductor structure including a Schott Method of producing a semiconductor structure including a Schott

1991-03-27

1993-06-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437203, 437228, 156643, H01L 21265, H01L 2144

Patent

active

052179117

ABSTRACT:
A method of producing a Schottky junction including a semiconductor substrate and a metal film includes successively producing on a semiconductor substrate a first insulating film, a second film having a different etching speed from that of the first insulating film, and a third insulating film having a different etching speed from that of said second film, exposing a part of the second film by dry etching the third insulating film, etching the second film using the third insulating film as a mask to expose part of the first insulating film, dry etching the first insulating film to expose part of the substrate, and producing a metal film forming a Schottky junction with the substrate on the exposed part of the semiconductor substrate.

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