Method of producing a semiconductor structure including a recrys

Details Method of producing a semiconductor structure including a recrys Method of producing a semiconductor structure including a recrys

1994-10-13

1995-11-21

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 44, 117 45, C30B 1320

Patent

active

054677319

ABSTRACT:
A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art.

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