Method of producing a semiconductor photodiode of indium antimon

Details Method of producing a semiconductor photodiode of indium antimon Method of producing a semiconductor photodiode of indium antimon

1979-06-22

1980-12-02

Edlow, Martin H.

357 16, 357 61, H01L 2714

Patent

active

042374715

ABSTRACT:
A method of producing semiconductor photodiodes of indium antimonide, by growing an indium antimonide epitaxial layer of one type conductivity onto a substrate of indium antimonide of another type conductivity, utilizing conventional vapor phase or liquid phase epitaxial techniques, wherein the antimony in the epitaxial layer is partially replaced by either arsenic or phosphorus, thus resulting in a high performing photoelectric device.

REFERENCES:
patent: 3558373 (1971-01-01), Moody

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