Method of producing a semiconductor on insulating substrate, and

Details Method of producing a semiconductor on insulating substrate, and Method of producing a semiconductor on insulating substrate, and

1992-03-26

1995-06-27

Kunemund, Robert

Fishing, trapping, and vermin destroying

437913, 437915, 148DIG26, 148DIG164, 148DIG53, H01L 2120

Patent

active

054279763

ABSTRACT:
In a field intensity relaxation of the drain end of a MOSFET, a projective area is not increased with a reduced electrostatic coupling of the source or drain with the gate. The MOSFET satisfying such condition is fabricated on the SOIS film formed by processes of the lateral vapor phase epitaxial growth and the like. A U-shape low concentration impurity region is provided on a gate electrode through a gate dioxide film and high concentration impurity regions are formed at the tops of protrusions. The gate electrode is embedded in insulation films, and the transistor region is fabricated by the lateral vapor phase epitaxial growth and the like.

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