Coherent light generators – Particular active media – Semiconductor
Patent
1993-01-07
1994-11-15
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, 372 46, H01S 319
Patent
active
053655370
ABSTRACT:
A semiconductor substrate is coated with an insulation mask. A window is cut in the mask using photolithography leaving stress risers at locations defining the length of a laser cavity. A plurality of layers of semiconductor film are selectively grown over the exposed substrate to form a pin diode and necessary impurities are injected. An intrinsic layer of the film forms a laser excitation layer and emits laser beams in response to excitation. Following heat treatment, the device is cooled rapidly, causing stress in the areas where the stress risers from the mask join the semiconductor film. By the time the device reaches room temperature, the semiconductor film is split and separated by cleavage planes. Alignment of the semiconductor laser device output beams is produced by anisotropic etching of the cleavage planes to form 45.degree. mirror planes. Conventional photolithographic techniques permit formation of the laser resonator with an accuracy on the order of submicrons.
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patent: 5159603 (1992-10-01), Kim
Sato Kiyotaka
Togura Kenji
Clarion Co. Ltd.
Epps Georgia Y.
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