Method of producing a semiconductor laser

Details Method of producing a semiconductor laser Method of producing a semiconductor laser

1991-07-29

1992-09-01

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437133, 148DIG95, H01L 2118

Patent

active

051438640

ABSTRACT:
A semiconductor laser device having an active layer sandwiched by semiconductor layers having larger energy band gaps than that of the active layer, includes a semiconductor absorption layer having an energy band gap no larger than that of the active layer and having a thickness periodically changing in the cavity length direction of the resonator, close to the active layer so that light which is generated at the active layer reaches the absorption layer, and a semiconductor refractive index matching layer, having a larger energy band gap than that of the active layer and a higher refractive index than those of the semiconductor layers sandwiching the active layer, to make the equivalent refractive indices in layer thickness direction substantially equal along the resonator direction.

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patent: 5023198 (1991-06-01), Strege
patent: 5042046 (1991-08-01), Sagawa et al.
"Proposal and Fabrication of a Gain-Coupled DFB Laser Diode", Japanese Association of Applied Physics, Autumn 1988, p. 834.

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