Method of producing a semiconductor integrated circuit device ha

Metal fusion bonding – Process – Plural joints

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H01L 21603

Patent

active

053619706

ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor element having pads, a lead frame stage on which the semiconductor element is mounted, and a plurality of terminal members mounted on the lead frame stage and located outside the semiconductor element, the terminal members respectively having electrically conductive patterns and being made of a material identical to a material of which the semiconductor element is made. The device includes inner leads spaced part from the lead frame stage, a first group of bonding members connecting the pads of the semiconductor element and the electrically conductive patterns of the terminal members to each other, and a second group of bonding members connecting the electrically conductive patterns of the terminal members and the inner leads to each other.

REFERENCES:
patent: 4306915 (1981-12-01), Shiba
patent: 4612564 (1986-09-01), Moyer
patent: 4714952 (1987-12-01), Takekawa et al.
patent: 4903114 (1990-02-01), Aoki et al.
patent: 5123585 (1992-06-01), Terakado et al.
patent: 5297722 (1994-03-01), Takahashi et al.

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