Method of producing a semiconductor integrated circuit device co

Details Method of producing a semiconductor integrated circuit device co Method of producing a semiconductor integrated circuit device co

1992-07-21

1994-03-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437176, 437 59, 437 31, H01L 2144, H01L 2148

Patent

active

052945669

ABSTRACT:
A semiconductor integrated circuit device comprising a negative differential resistance element, such as an RHET and RBT, and a field effect transistor, such as an SBFET and heterojunction type FET, which are formed on the same semiconductor substrate, a base layer of the negative differential resistance element and a channel layer of the field effect transistor being formed on the same epitaxial layer, and the same conductive material is used to simultaneously form an emitter electrode and a gate. A monolithic integration of both the element and transistor can be achieved both rationally and easily.

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"Integration of a Resonant-Tunneling Structure with a Metal-Semiconductor Field-Effect Transistor", Woodward et al., Applied Physics Letters 51, (19), Nov. 9, 1987, pp. 1542-1544.

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