Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2011-02-15
2011-02-15
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S089000, C117S104000, C117S105000
Reexamination Certificate
active
07887634
ABSTRACT:
In a method of producing a semiconductor element in a substrate, a plurality of carbide precipitates is formed in the substrate, doping atoms are implanted into the substrate, thereby forming crystal defects in the substrate, the substrate is heated, such that at least a part of the crystal defects is eliminated using the carbide precipitates, and the semiconductor element is formed using the doping atoms.
REFERENCES:
patent: 2007/0161219 (2007-07-01), Giles
patent: 10 2005 054 218 (2007-05-01), None
International Technology Roadmap for Semiconductors, 2005 Edition, Front End Processes.
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Colombeau, B. et al; “Electrical Deactivation and Diffusion of Boron in Preamorphized Ultrashallow Junctions: Interstitial Transport and F co-implant Control”; Proceedings IEDM 2004, pp. 971-974.
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Kennel, H.W. et al; “Modeling of Ultrahighly Doped Shallow Junctions for Aggressively Scaled CMOS”; Proceedings IEDM 2002.
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Yasutake, K. et al; “Oxygen Precipitation and Microdefects in Czochralski-Grown Silicon Crystals”; Physica Status Solidi (a), 83, pp. 207-217, (1984).
Dickstein & Shapiro LLP
Infineon - Technologies AG
Kunemund Robert M
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