Method of producing a semiconductor device with a heat sink

Details Method of producing a semiconductor device with a heat sink Method of producing a semiconductor device with a heat sink

1995-05-09

1997-08-05

Breneman, R. Bruce

Etching a substrate: processes

Forming or treating an article whose final configuration has...

216 17, 216 56, 216100, 216105, 437902, H01L 21027, H01L 2334

Patent

active

056538910

ABSTRACT:
A method of producing a semiconductor device with a convex heat sink that disposes a semiconductor element within a space formed by leads of a lead frame. Bonding pads of the semiconductor element are connected to the leads through wires. The convex heat sink is made from a high heat-conductive material and formed so as to have an outer periphery of a size sufficiently large to overlap the leads. The semiconductor element is disposed at a center portion of the heat sink. An insulator is disposed on the leads. The insulator bonds and fixes the semiconductor element to the heat sink. Resin seals the semiconductor device except for a part of the leads and a top surface of a projecting portion of the heat sink. The insulator has a shape like a tape so as to cover part of the leads and extend along a bottom surface near a circumferential edge of the convex heat sink. The side surface of the projecting portion of the heat sink is scraped out into a curved surface. The method includes providing a thermally conductive material, forming first and second resist films, and etching to produce heat sinks.

REFERENCES:
patent: 3212569 (1965-10-01), McAdam
patent: 3290564 (1966-12-01), Wolff, Jr.
patent: 3651562 (1972-03-01), Hambleton
patent: 3679500 (1972-07-01), Kubo et al.
patent: 3689993 (1972-09-01), Tolar
patent: 3941312 (1976-03-01), Ohno et al.
patent: 3965277 (1976-06-01), Guritz et al.
patent: 4030943 (1977-06-01), Lee et al.
patent: 4123293 (1978-10-01), Okinawa et al.
patent: 4151543 (1979-04-01), Hayakawa et al.
patent: 4684975 (1987-08-01), Takiar et al.
patent: 4942497 (1990-07-01), Mine et al.
patent: 5050040 (1991-09-01), Gondusky et al.
patent: 5068715 (1991-11-01), Wade et al.
patent: 5089443 (1992-02-01), Karey et al.
patent: 5105259 (1992-04-01), McShane et al.
patent: 5157478 (1992-10-01), Ueda et al.
patent: 5172213 (1992-12-01), Zimmerman
patent: 5200365 (1993-04-01), Culver
patent: 5200809 (1993-04-01), Kwon
patent: 5202288 (1993-04-01), Doering et al.
patent: 5208188 (1993-05-01), Newman
patent: 5227662 (1993-07-01), Ohno et al.
patent: 5229643 (1993-07-01), Ohta et al.
patent: 5250815 (1993-10-01), Battersby et al.
patent: 5252855 (1993-10-01), Ogawa et al.
patent: 5262927 (1993-11-01), Chia et al.
patent: 5328870 (1994-07-01), Marrs
patent: 5367196 (1994-11-01), Mahulikar et al.
patent: 5381042 (1995-01-01), Lerner et al.
patent: 5444025 (1995-08-01), Sono et al.
patent: 5455462 (1995-10-01), Marrs

Affiliated with

Also associated with

Rating

Method of producing a semiconductor device with a heat sink does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a semiconductor device with a heat sink, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a semiconductor device with a heat sink will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072327