Method of producing a semiconductor device using electron cyclot

Details Method of producing a semiconductor device using electron cyclot Method of producing a semiconductor device using electron cyclot

1989-08-15

1994-06-21

Powell, William A.

Fishing, trapping, and vermin destroying

437192, 437200, H01L 2100, H01L 2102, H01L 21265, H01L 2144

Patent

active

053228065

ABSTRACT:
A method of producing a semiconductor device including the steps of depositing a refractory metal gate electrode at a predetermined region of a semi-insulating substrate surface, and thereafter depositing an insulating film at regions other than the gate electrode region, wherein the production of the insulating film is carried out by an electron cyclotron resonance plasma CVD method while applying a high frequency electrical bias to the substrate.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4585668 (1986-04-01), Asmussen et al.
patent: 4683838 (1987-08-01), Kimura et al.
patent: 4732761 (1988-03-01), Machida et al.

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