Method of producing a semiconductor device provided with front a

Details Method of producing a semiconductor device provided with front a Method of producing a semiconductor device provided with front a

1986-10-29

1990-04-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437159, 437196, H01L 21285, H01L 21304

Patent

active

049140540

ABSTRACT:
A semiconductor device comprises a semiconductor substrate in which a plurality of semiconductor regions are formed, a front surface electrode in contact with the region, and a back surface electrode consisting of a gold alloy layer and a silver layer. After formation of the front surface electrode, the back side of the substrate is polished. Then, the gold alloy layer and the silver layer are formed in succession on the polished back surface of the substrate.

REFERENCES:
patent: 3028663 (1962-04-01), Iwersen et al.
patent: 3200490 (1965-08-01), Clymer
patent: 3434828 (1969-03-01), Cornelison et al.
patent: 3686698 (1972-08-01), Akeyama et al.
patent: 4403397 (1983-09-01), Bottka et al.

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