Method of producing a semiconductor device having two MIS transi

Details Method of producing a semiconductor device having two MIS transi Method of producing a semiconductor device having two MIS transi

1993-11-24

1996-08-13

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437 57, H01L 2170

Patent

active

055455778

ABSTRACT:
After forming a gate oxide film on the surface side of a single crystalline silicon substrate, a first polycrystalline silicon layer is subsequently formed. After that, portions of polycrystalline silicon layers are left in each gate electrode formation region of a high voltage drive circuit. Then, the gate oxide film in a low voltage drive circuit side is removed while maintaining this state. Then, after forming a gate oxide film on those surface sides, a polycrystalline silicon layer is subsequently formed in the surface side. After that, impurities are introduced into the polycrystalline silicon layer to provide it with electrical conduction, and then portions of polycrystalline silicon layers are left.

REFERENCES:
patent: 4471373 (1984-09-01), Shimizu et al.
patent: 5057448 (1991-10-01), Kuroda
patent: 5134082 (1992-07-01), Kirchgessner
patent: 5183773 (1993-02-01), Miyata
patent: 5192992 (1993-03-01), Kim et al.
patent: 5241208 (1993-08-01), Taguchi
patent: 5272098 (1993-12-01), Smayling et al.

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