Method of producing a semiconductor device having a disordered s

Details Method of producing a semiconductor device having a disordered s Method of producing a semiconductor device having a disordered s

1988-11-17

1992-04-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG95, 148DIG37, 437129, 437133, 437160, 437161, 437987, H01L 2120

Patent

active

051089483

ABSTRACT:
A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also grown in a known spatial relationship to the superlattice. The doped layer is patterned as by etching and then the device is annealed to diffuse selenium impurities from the doped layer. The time and temperature of annealing are controlled such that the impurities diffuse into and thereby disorder regions of the superlattice layer, leaving a non-disordered region which can serve as a resonator in a laser.

REFERENCES:
patent: 4654090 (1987-03-01), Burnham et al.
patent: 4771010 (1988-09-01), Epler et al.
patent: 4810670 (1989-03-01), Furuyama et al.
patent: 4824798 (1989-04-01), Burnham et al.
patent: 4830983 (1989-05-01), Thornton
"Low Threshold Planar Buried Heterostructure Lasers Fabricated by Impurity-Induced Disordering", Thornton et al., Appl. Phys. Lett. 47(12), Dec. 15, 1985, pp. 1239-1241.
"Low-Threshold Disorder-Defined Buried-Heterostructure Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers", Deppe et al., J. Appl. Phys. 58(12), Dec. 15, 1985, pp. 4515-4520.

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