Method of producing a semiconductor device by forming an...

Details Method of producing a semiconductor device by forming an... Method of producing a semiconductor device by forming an...

2007-01-10

2010-11-16

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S475000, C438S788000, C438S798000, C257SE29111

Reexamination Certificate

active

07833882

ABSTRACT:
A method of producing a semiconductor device, including: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby forming an oxide film; and an electrode pad forming step of forming an electrode pad of a metal on the oxide film.

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Office Action from Japanese Patent Office for Patent Application No. P2006-037134 mailed Mar. 2, 2010. English Translation Enclosed.

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