Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1983-08-29

1984-08-28

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29578, 148187, H01L 2122

Patent

active

RE0316520

ABSTRACT:
In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, a patterned thin silicon oxide layer is formed. This thin silicon oxide layer is varied into the thick oxide layer by the thermal-oxidation treatment.

REFERENCES:
patent: 3783047 (1974-01-01), Paffen et al.
patent: 3911471 (1975-10-01), Kooi et al.
patent: 3920483 (1975-11-01), Johnson et al.

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