Method of producing a semiconductor device

Metal treatment – Compositions – Heat treating

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29571, 29576B, H01L 21265, H01L 21263

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active

043516742

ABSTRACT:
A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.
Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

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