Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1983-10-21

1985-07-02

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 148175, 148187, H01L 2122, H01L 21265

Patent

active

045259224

ABSTRACT:
A method of producing a semiconductor device, including a bipolar transistor and a Schottky barrier diode (e.g., an SBD transistor), includes the steps of selectively etching an insulating layer formed on an N-type silicon epitaxial layer so as to form an emitter electrode contact window; and forming a polycrystalline silicon layer on the exposed portion of a P-type base region in the window. The method further includes the steps of introducing N-type impurities into the P-type base region through the polycrystalline silicon layer in the window, selectively etching the insulating layer so as to form a base electrode contact window and a contact window for the electrode of the SBD and carrying out a heat treatment for redistribution of the introduced impurities so as to form an emitter region. An emitter electrode is then formed on the polycrystalline silicon layer and the electrode of the SBD is formed directly on the silicon epitaxial layer.

REFERENCES:
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patent: 4377031 (1983-03-01), Goto et al.
patent: 4404048 (1983-09-01), Vogelzang
patent: 4408387 (1983-11-01), Kiriseko
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patent: 4418468 (1983-12-01), Vora et al.
patent: 4452645 (1984-06-01), Chu et al.
European Search Report, Berlin, 7-12-1983, Examiner C. S. Gibbs.
European EP-A-O 020 998 (IBM).
IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980, New York, T. H. Yeh "Self-Aligned Integrated NPN (vertical) and PNP (lateral) Structures", pp. 4047-4051.
IBM Technical Disclosure Bulletin, vol. 22, No. 4, Sep. 1979, New York, R. J. Ross, "Stable SBD for Nitride-passivated Processes Via Oxide Step Reduction, pp. 1403-1404.

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