Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1984-03-23

1985-12-17

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

357 72, 357 80, 26427217, H05K 506, H01L 2330

Patent

active

045585105

ABSTRACT:
There is provided a method of producing a semiconductor device comprising a protecting silicone gel layer which covers a semiconductor chip and bonding wires for taking electrodes out of this chip, and a resin layer which has a smaller thermal expansion coefficient than that of this silicone gel layer at least part of which contacts the silicone gel layer. This method comprises the steps of: thermally expanding the silicone gel layer until it reaches the product environmental guarantee temperature which comes before the cure acceleration reaction in the resin layer; and completely curing the resin layer while maintaining the volume of the silicone gel layer at the same time, thereby fixedly adhering it with the other parts.

REFERENCES:
patent: 3824328 (1974-07-01), Ting et al.
patent: 3839660 (1974-10-01), Stryker
patent: 4092487 (1978-05-01), Imai
patent: 4163072 (1979-07-01), Soos
Chellis et al., "Epoxy Resin for Dielectric Layers", IBM Tech. Discl. Bull., vol. 12, No. 9, Feb. 1970.

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