Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1975-07-09

1976-06-15

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21265

Patent

active

039635244

ABSTRACT:
The surface of a semiconductor substrate, such as a silicon crystal, is uniformly coated with a layer of Si.sub.3 N.sub.4 and at least two selectively spaced windows are provided therein. The uncovered silicon surface within such windows is then coated with a layer of SiO.sub.2. Next, a SiO.sub.2 area within a first window along with a portion of the adjacent Si.sub.3 N.sub.4 areas are coated with a photo-lacquer mask while the substrate surface area beneath the second window is doped with a select dopant. This procedure is then reversed and the Photo-lacquer mask is removed from the first window and applied onto the second window while the substrate surface area beneath the first window is contacted with select dopant to produce a doped zone. In this manner, considerable tolerance for positioning of a diffusion mask is provided.

REFERENCES:
patent: 3729811 (1973-05-01), Beale et al.
patent: 3730778 (1973-05-01), Shannon et al.
patent: 3756861 (1973-09-01), Payne et al.
patent: 3791883 (1974-02-01), Takei et al.
patent: 3793088 (1974-02-01), Eckton, Jr.
patent: 3898105 (1975-08-01), Mai et al.

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