Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1980-05-30

1983-03-15

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576W, 29578, 148187, H01L 2120, H01L 2126

Patent

active

043766641

ABSTRACT:
In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermal-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, the epitaxial layer is covered by an anti-oxidation masking layer, an insulating layer and a photo resist layer. Subsequent to the step of introducing impurities, the anti-oxidation masking layer is shaped into a pattern mask for the thermal-oxidation treatment.

REFERENCES:
patent: 3783047 (1974-01-01), Paffen et al.
patent: 3911471 (1975-10-01), Kooi et al.
patent: 3920483 (1975-11-01), Johnson et al.
patent: 4004044 (1977-01-01), Franco et al.
Bersin et al., "The Dry Ox Process for Etching Silicon Dioxide", Solid State Technology, vol. 20, Apr. 1977, pp. 78-80.

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