Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1978-07-03
1979-03-13
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
148 15, 148187, H01L 2122, H01L 2126
Patent
active
041434552
ABSTRACT:
Semiconductor components, as for LSI-circuits are produced in such a manner that epitaxial layers as well as buried layers are dispensed with while an increased manufacturing yield and an increased structural packing density is achieved via an oxide insulating technique. The process involves applying and structuring a first insulating layer, such as composed of Si.sub.3 N.sub.4, onto a semiconductor substrate having a first zone of one conductivity type therein, etching insulating grooves into the substrate areas not covered with the first insulating layer and filling such grooves with a second insulating layer, such as composed of SiO.sub.2, which is thicker than the first insulating layer, and then emplacing the various semiconductor structures at select surface areas between spaced-apart areas of the second insulating layer so as to complete the semiconductor structure.
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Rathbone Ronald
Schwabe Ulrich
Ozaki G.
Siemens Aktiengesellschaft
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