Method of producing a semiconducting material

Details Method of producing a semiconducting material Method of producing a semiconducting material

1996-04-12

1999-12-07

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117919, 117925, 117927, 438385, 438398, C30B 2954

Patent

active

059976373

ABSTRACT:
A method of producing a semiconducting material comprises reacting one or more of halogenosilanes with an alkali metal and/or an alkaline earth metal in an inert solvent to give a condensate and thermally decomposing the condensate. The condensate is dissolved in a suitable solvent such as toluene and tetrahydrofuran and applied by casting to a suitable substrate. The resulting semiconductor material in its film form has an optical band-gap (EO) of usually 0.1-4.0 eV.

REFERENCES:
patent: 5220181 (1993-06-01), Kanai et al.
patent: 5258334 (1993-11-01), Lantz, II
patent: 5304622 (1994-04-01), Ikai et al.
patent: 5342982 (1994-08-01), Mnani et al.
patent: 5358987 (1994-10-01), Kanai et al.
Communication, European Search Report and Annex to European Search Report on European Patent Application No. EP 94 30 4431.

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