Method of producing a quasi-flat semiconductor device capable of

Details Method of producing a quasi-flat semiconductor device capable of Method of producing a quasi-flat semiconductor device capable of

1991-04-25

1992-05-19

Mintel, William

Optical waveguides

With optical coupler

Particular coupling structure

357 16, 357 19, 357 55, 385 8, H01L 3300

Patent

active

051152851

ABSTRACT:
A semiconductor device capable of producing a multiwavelength laser effect comprising a substrate having thereon at least two double heterostructure stacks, each stack comprising at least one active layer bounded by two confinement layers, the stacks being in the form of elongated strips disposed side-by-side, electrically insulated from each other. Each stack comprises a P-N junction therein which is individually and electrically operable and which is situated in the vicinity of an active layer of a different composition and rank in each stack. The transverse opposite ends of the strips are optically prepared and the upper surfaces of the strips form an upper surface for the device which is substantially flat.

REFERENCES:
patent: 4318059 (1982-03-01), Lang et al.
patent: 4571729 (1986-02-01), Fujimoto
patent: 4925811 (1990-05-01), Menigaux et al.
patent: 4993036 (1991-02-01), Ikeda et al.
Welch et al,"N-Phase Emission From Index Guided Laser Array Up to 400 mW", Electronics Letters, Mar. 13, 1986, vol. 22, No. 6, pp. 293-294.

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